An analytical approach for prognosis of mass transport during manufacturing of a limiting amplifier circuit. On increasing of integration rate of elements of the amplifier

Abstract

In this paper we introduce an analytical approach for prognosis of mass transport during manufacturing of a limiting amplifier circuit. Based on this approach we obtain conditions to increase density of elements of this circuit, manufactured by diffusion or ion implantation with optimized annealing time of dopant and/or radiation defects. The above analytical approach gives a possibility to take into account nonlinearity of the mass transport, dependences of parameters of the transport on spatial coordinate and time.